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Specific Process Knowledge/Etch/DRIE-Pegasus/DREM: Difference between revisions

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{| class="wikitable hideable hidden" border="1" cellspacing="1" cellpadding="2"  align="left" width="430px"
{| class="wikitable hideable hidden"  
!colspan="3" style="text-align:left;" | [[image:Thermal treat your sample.png|x100px|Thermal treatment of your sample]] Thermal treatment of your sample
{{Template:Peg2cont1
|-
|stepname= 0 Home matching
!Entry page in LabAdviser
|generalbox=
!Techniques
|timebox=90t
!Materials
|presbox=7T
|-
|gasbox=sulf
|rowspan="5" valign="top"|[[Specific Process Knowledge/Thermal Process|Thermal Process]]
|RFbox= yes, lots
|Annealing (>350C)
|matchbox= lit
|Si, PECVD layers, Al, BCB curing, Polymer
|miscbox=na
|-
}}
|Oxidation
|Si wafers
|-
|Doping with B/P
|Si wafers
|-
|Pyrolysis
|Resists: AZ, SU8, PDMS
|-
|Rapid Thermal Anneal (RTP)
|SiO2, Si3N4, Ti, III-V
|-
|
[[Specific Process Knowledge/Lithography/Baking| Lithography/Baking]] <br>
|Baking (<300dg)
|baking resist and polymers
|-
|}
|}
{| class="wikitable hideable hidden" border="1" cellspacing="1" cellpadding="2"  align="left" width="430px"
{| class="wikitable hideable hidden" border="1" cellspacing="1" cellpadding="2"  align="left" width="430px"