Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

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 * RCA cleaning of the test wafer (p-type, 1-20 Ωcm) and the dummy wafers
 * Phosphorus pre-deposition in the Phosphorus Pre-dep furnace (A4).
-** Recipe: "POCLNEW"
+** Recipe: "POCL900"
 ** Temperature: 900 °C
 ** Time: 15 min phosphorus pre-dep and 20 min annealing/N<sub>2</sub> post purge
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 The sheet resistance was 54 Ωsq in the center of the wafer and 45-48 Ωsq in the edge of the wafer. This correspond quite good to the results that previously had been obtained for the furnace as can be seen on this LabAdviser page.
-====Notes about the "POCLNEW" recipe====
+====Notes about the POCL recipes====
-A new recipe called "POCLNEW" was made, after the POCl<sub>3</sub> line was modified. The N<sub>2</sub> high flow (3 SLM) is on all the time through the recipe. There is a 2 min pre-purge with first N2 low (150 sccm) through the POCl3 bubbler, i.e. with the valves v4a and v4b closed, and then with O2 (0.50 SLM), before the pre-deposition time starts. After the pre-deposition, an N2 low post-purge (500 sccm) is done for 2 minutes with v4a and v4b closed.
+A new recipe for POCL doping called was made, after the POCl<sub>3</sub> line was modified. The N<sub>2</sub> high flow (3 SLM) is on all the time through the recipe. There is a 2 min pre-purge with first N2 low (150 sccm) through the POCl3 bubbler, i.e. with the valves v4a and v4b closed, and then with O2 (0.50 SLM), before the pre-deposition time starts. After the pre-deposition, an N2 low post-purge (500 sccm) is done for 2 minutes with v4a and v4b closed.
 For safety reasons it is important that the POCl<sub>3</sub> is completely removed from the furnace, before it is opened to load or unload wafers.