Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

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-====Phosphorous doping test after change of hardware====
+==Phosphorous doping test after change of hardware==
-Det er helt fint – Du må selvfølgelig gerne spørge til status på A4 ovnen.
+In 2022, the POCl has line lines on the furnace were modified. At the same time some software changed were also made, and the recipes on the furncewere updated.
-Der blev åbnet POCl-flasken i går, og i dag laver vi en doteringstest med en testskive i ovnen. Jeg unloader testskiven i eftermiddag og måler sheet resistance på den for at kunne sammenligne med tidligere resultater i LabAdviser:
+Afterwards, a phosphorus doping test was made with a test wafer and four dummy wafers (two dummy wafers on each side of the test wafers) in the furnace.
-http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Phosphorus
+====Process:====
-Det er denne proces, vi forsøger at gentage (se nederst på siden i LabAdviser):
+* RCA cleaning of test wafer (p-type, 1-20 Ωcm) and dummy wafers
--          RCA rens: Testskive (p-type, 1-20 Ωcm) + dummy-skiver
+* Phosphorus pre-dep in the A4 furnace. Recipe: "POCLNEW", 900 °C, 15 min phosphorus pre-dep and 20 min annealing
--          Forfor pre-dep i A4 ovnen: ”POCLNEW” (ny opskrift), 900°C, 15 min fosfor pre-dep + 20 min annealing
+* BHF dip in the RCA cleaning bench to remove phosphorus glass from the test wafer
--          BHF dyp ved RCA-rensen: Fjern fosfor-glas fra testskiven
+* Measure sheet resistance using the 4-point proble
--          4 Point Probe: Mål sheet resistance på testskiven
+====Results:====
+After the process describe above, the sheet resistance on the test wafer was measured.
+The sheet resistance was 54 Ωsq in the center of the wafer and 45-48 Ωsq in the edge of the wafer. This correspond quite quite good to results that have been obtained previously for the furnace as can be seen on this LabAdviser page.