Specific Process Knowledge/Lithography/UVExposure: Difference between revisions
| Line 547: | Line 547: | ||
The logon password for the PC is "mla" (without quotation marks). | The logon password for the PC is "mla" (without quotation marks). | ||
Special features | '''Special features''' | ||
*High resolution (Write Mode I, | *High resolution (Write Mode I, Optical Autofocus) | ||
*Backside Alignment | *Backside Alignment | ||
*Basic Gray Scale Exposure | *Basic Gray Scale Exposure | ||
| Line 555: | Line 555: | ||
*Upgrade to 8" (stage and exposure area) | *Upgrade to 8" (stage and exposure area) | ||
'''Special restrictions''' | |||
*No pneumatic autofocus | |||
*405 nm laser is not allowed | |||
*Soft resists are not allowed | |||
*Resist thickness must be ≤10 µm | |||
*No crystal bonded chips | |||
*Thickness variations across the substrate must be <50 µm | |||
*Wafer bow must be <50 µm | |||
'''[https://www.youtube.com/playlist?list=PLjWVU97LayHAiCabstMfAUeeWyQoQI_cV Training videos]''' | '''[https://www.youtube.com/playlist?list=PLjWVU97LayHAiCabstMfAUeeWyQoQI_cV Training videos]''' | ||