Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions
| Line 45: | Line 45: | ||
|AR-600-71, 1165 Remover | |AR-600-71, 1165 Remover | ||
|[[media:Process_Flow_CSAR.docx|Process Flow CSAR.docx]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br> | |[[media:Process_Flow_CSAR.docx|Process Flow CSAR.docx]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br> | ||
|- | |- | ||
Revision as of 11:19, 4 April 2022
THIS PAGE IS UNDER CONSTRUCTION
JEOL 9500: My First E-Beam Lithography Process
This page is a step by step guide to help new users through their first exposure on the JEOL 9500 system, (insert link to same page for Raith eLine Plus). In this guide we will set up an exposure job as an example. We will set it up as a dose test and hence keep it at a fairly low complexity level. The JEOL 9500 system has a fairly steep learning curve and we encourage all users to keep the complexity level of their first exposure similar to the job in this guide.
The job set up in this guide will go through the following steps
- Spin coating of e-beam resist
- Job file preparation
- Pattern preparation including Proximity Effect Correction
- Exposure
- Development
Spin coating of resist
DTU Nanolab provides the following standard EBL resists.
| Resist | Polarity | Comments | Technical reports | Spin Coater | Thinner | Developer | Rinse | Remover | Process flows (in docx-format) | |
| CSAR | Positive | Standard positive resist, very similar to ZEP520. | Allresist_CSAR62_English.pdf,, CSAR_62_Abstract_Allresist.pdf | See table here | Anisole | AR-600-546, AR-600-548, N50, MIBK:IPA | IPA | AR-600-71, 1165 Remover | Process Flow CSAR.docx Process Flow CSAR with ESPACER Process Flow CSAR with Al Process Flow LOR5A with CSAR | |
| Copolymer AR-P 617 | Positive | Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact Lithography for information. | AR_P617.pdf | See table here | PGME | AR 600-55, MIBK:IPA | acetone/1165 | Trilayer stack: Process_Flow_Trilayer_Ebeam_Resist.docx | ||
| mr EBL 6000.1 | Negative | Standard negative resist | mrEBL6000 processing Guidelines.pdf | See table here | Anisole | mr DEV | IPA | mr REM | Process_Flow_mrEBL6000.docx
| |
| HSQ (XR-1541) | Negative | Approved. Standard negative resist | HSQ Dow Corning, MSDS HSQ | See table here | TMAH, AZ400K:H2O | H2O | process flow HSQ | |||
| AR-N 8200 | Negative | AllResist | Both e-beam and DUV sensitive resist. Currently being tested, contact Thomas Pedersen for information. | AR 300-47 | H2O | |||||
| AR-N 7520 | Negative | Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact Peixiong Shi for information. | AR-N7500-7520.pdf | See table here | PGMEA | AR 300-47, TMAH | H2O |
|