Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300: Difference between revisions
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==IBE/IBSD Ionfab 300: milling | ==IBE/IBSD Ionfab 300: milling and dry etching == | ||
[[Image:IBE_IBSD_udstyret_i_RR1.jpg|300x300px|thumb|IBE and IBSD: positioned in cleanroom A-1]] | [[Image:IBE_IBSD_udstyret_i_RR1.jpg|300x300px|thumb|IBE and IBSD: positioned in cleanroom A-1]] | ||
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IBE: Ion Beam Etch | IBE: Ion Beam Etch | ||
IBSD: Ion Beam Sputter Deposition | IBSD: Ion Beam Sputter Deposition (has been decommissioned 2022) | ||
This Ionfab300 from Oxford Instruments is capable of of | This Ionfab300 from Oxford Instruments is capable of of ion sputter etching/milling. | ||
The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees). | The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees). | ||