Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide

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Deposition of Titanium Oxide

Titanium oxide can be deposited either by a sputter technique or by use of ALD (atomic layer deposition). In sputter deposition of titanium oxide, the target is Ti and oxygen is added to the chamber during the process resulting in Titanium oxide on the sample. Therefore some process development may be necessary to achieve the correct stoichiometry.

• TiO2 made on IBE/IBSD Ionfab300
• TiO2 deposition using ALD
• TiO2 deposition using Sputter-System Metal-Oxide(PC1)

Comparison of the methods for deposition of Titanium Oxide

	Sputter technique using IBE/IBSD Ionfab300	Sputter-system Metal-Oxide(PC1)	Sputter-System(Lesker)	ALD Picosun 200
Generel description	TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.	Reactive DC sputtering of Ti target Reactive or non-reactive RF sputtering of TiO2 target Reactive pulsed DC sputtering Reactive HIPIMS (high-power impulse magnetron sputtering)	Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma RF sputtering of TiO2 target	ALD (atomic layer deposition) of TiO2
Stoichiometry	Can probably be varied (sputter target: Ti, O2 added during deposition)	Can probably be varied	Can probably be varied	Temperature dependent - Anatase or amorphous TiO2
Film Thickness	~10 nm - ~0.5 µm (>2h)	~10 nm - ~0.5 µm	~10 nm - ~0.5 µm (>2h)	0 nm - 100 nm
Deposition rate	3.0-3.5 nm/min (reactive sputtering)	not yet known, probably faster than Sputter-System(Lesker)	3-5 nm/min (RF sputtering) 0.3 - 0.5 nm/min	0.06 nm/min - 0.40 nm/min (very recipe and temperature dependent)
Step coverage	Not Known	Not Known	Not Known	Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature	Expected to be below 100 °C	RT to 600 °C	RT to 400 °C	120 °C - 150 °C: Amorphous TiO2 300 °C - 350 °C: Anatase TiO2
More info on TiO2	TiO2 made on IBE/IBSD Ionfab300	TiO2 deposition using Sputter-System Metal-Oxide(PC1)		ALD1: TiO2 deposition using ALD1 ALD2: TiO2 deposition using ALD2
Substrate size	1 50mm wafer 1 100mm wafer 1 150mm wafer 1 200mm wafer Smaller pieces can be mounted with capton tape	many small samples Up to 10x 100 mm or 150 mm wafers	several small samples several 50 mm wafers (Ø150mm carrier) 1x 100 mm wafers 1x 150 mm wafers	ALD1: 1-5 100 mm wafers 1-5 150 mm wafers 1 200 mm wafer Several smaller samples ALD2: 1 100 mm wafer 1 150 mm wafer 1 200 mm wafer Several smaller samples
Allowed materials	Almost any materials not Pb and very poisonous materials	Almost any materials Pb and poisonous materials only after special agreement	Almost any that do not outgas and are not very poisonous Dedicated carrier for III-V materials See cross-contamination sheet	Silicon Silicon oxide, silicon nitride Quartz/fused silica Metals - Use a dedicated carrier wafer III-V materials - Use dedicated carrier wafer Polymers - Depending on the melting point/deposition temperature, use dedicated carrier wafer. Ask for permission