Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions
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|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
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*0-1100 <sup>o</sup>C | *0-1100 <sup>o</sup>C (only short time a the high temperatures - see the user manual) | ||
*III-V materials only to 450 <sup>o</sup>C | *III-V materials only to 450 <sup>o</sup>C | ||
*Temperature ramp up to | *Temperature ramp up to 50 <sup>o</sup>C/min | ||
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*One 50 mm or 100 mm wafer | *One 50 mm or 100 mm wafer | ||
*Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide) | *Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide on the back) | ||
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| style="background:LightGrey; color:black"|Substrate materials allowed | | style="background:LightGrey; color:black"|Substrate materials allowed | ||
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A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used | A carrier is always needed: For III-V materials and metals a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used | ||
*Silicon | *Silicon | ||
*Silicon oxide | *Silicon oxide | ||
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*Polysilicon | *Polysilicon | ||
*III-V materials (on graphite carrier, max 450 <sup>o</sup>C) | *III-V materials (on graphite carrier, max 450 <sup>o</sup>C) | ||
*Some metals - Ask the Thin Film group for permission | *Some metals - (on graphite carrier). Ask the Thin Film group for permission | ||
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