Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Thermal evaporation of Cr in Thermal evaporator: Difference between revisions
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== '''Film characterisation''' == | == '''Film characterisation''' == | ||
Full 6" wafer is loaded for film characterization. Measured base pressure before start 4.4 10-6 Torr. Waited 1 hour before start. Deposition thickness setpoint is set to 100 nm. | Full 6" wafer is loaded for film characterization. Measured base pressure before start 4.4 10-6 Torr. Waited 1 hour before start. Deposition thickness setpoint is set to 100 nm. The prepared sample was cleaved into small pieces for characterization. | ||
===X-ray reflectivity method=== | ===X-ray reflectivity method=== | ||