Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2: Difference between revisions

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[[Category: Etch (Dry) Equipment|DRIE]]
[[Category: Etch (Dry) Equipment|DRIE]]


===This system is a research tool and not available to the users===
===Restrictions on a dedicated research tool ===
In general, the dry etch tools at DTU Nanolab are free to use for users with proper training. The users have freedom to etch the approved materials within rules specified in manuals, LabAdviser and cross contamination sheets. The instruments are set up to meet the broadest range of etch demands. With most of them, there is a continuous tug of war between providing flexibility (for instance allowing mask materials that do not form any volatile etch products with the gas chemistry available in the process chamber) while ensuring process chamber cleanliness.
 
 
Pegasus 2 is a dedicated research tool. As such, it will not be released for general use
 
If you want to get access to the tool, then talk to professor Henry Jansen
If you want to get access to the tool, then talk to professor Henry Jansen
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Nanoscale silicon etching with SF6 and O2|Nanoscale silicon etching with SF6 and O2 ]]
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Nanoscale silicon etching with SF6 and O2|Nanoscale silicon etching with SF6 and O2 ]]
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Black silicon on Demand|Black silicon on Demand]]
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Black silicon on Demand|Black silicon on Demand]]


== Current setup and rules on Pegasus 2 ==
== Current setup and rules on Pegasus 2 ==

Revision as of 09:54, 15 December 2020

Feedback to this page: click here

Restrictions on a dedicated research tool

In general, the dry etch tools at DTU Nanolab are free to use for users with proper training. The users have freedom to etch the approved materials within rules specified in manuals, LabAdviser and cross contamination sheets. The instruments are set up to meet the broadest range of etch demands. With most of them, there is a continuous tug of war between providing flexibility (for instance allowing mask materials that do not form any volatile etch products with the gas chemistry available in the process chamber) while ensuring process chamber cleanliness.


Pegasus 2 is a dedicated research tool. As such, it will not be released for general use

If you want to get access to the tool, then talk to professor Henry Jansen

Current setup and rules on Pegasus 2

Click here to access older configurations.

The current configuration is

Currently valid from November 2020 onwards
Item The currently applied modification Comments
Available gasses and gas chemistry Available gasses:
  • SF6: 50 sccm
  • O2: 50 sccm
  • Ar: 283
  • N2: 500 sccm
  • He: 11 sccm

Not available:

  • C4F8 (H2 currently fitted but closed) : 0 sccm
  • CO2: (It is not in the software)
OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up
Plasma source heaters Applies to
  • Plenum Heater
  • Inner Heater
  • Magnetic Confinement Heater
  • Chamber Heater
The temperature on the heaters in the plasma source are set to 20 degrees with a high tolerance. This essentially corresponds to powered off compared to default Pegasus temperatures which are in the 120-140 degrees range.

Always make sure that the temperature settings in the recipes are not enabled as shown below this table.

RF power and pressure settings All recipes run without coil power, very low platen power and low pressures None of the recipes use coil power in order to prevent aluminium fluoride formation at the aluminium oxide dome. These particles may drop on the wafer or chuck and cause abnormalitites.

Most of the recipes rely on very low pressure and low power - 0.2 mTorr and 10 Watt platen power is not an error and easily supports the plasma.

Carbon free plasmas The process chamber does not have any carbon containing etch gasses. Therefore, polymer build-up on the chamber walls is not an issue. The 'carbon free' policy does not, however, apply to the choice of masking materials and CSAR, AZ and DUV resists are allowed.
Chamber conditioning and cleaning Running long oxygen cleans is not necessary and must be avoided. Neither are shorter cleans between wafers. The absence of carbon containing etch gasses ensures that the process chamber is kept clean.
Approved recipes Running long oxygen cleans is not necessary and must be avoided. Neither are shorter cleans between wafers. The absence of carbon containing etch gasses ensures that the process chamber is kept clean.

Access to Pegasus 2 configuration templates

Pegasus 2 configuration table version 1