Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2: Difference between revisions
| Line 23: | Line 23: | ||
|ItemConfiguration= . | |ItemConfiguration= . | ||
* SF<sub>6</sub>: 50 sccm | * SF<sub>6</sub>: 50 sccm | ||
* | * O<sub>2</sub>: 50 sccm | ||
* Ar: 283 sccm | * Ar: 283 sccm | ||
* | * N<sub>2</sub>: 500 sccm | ||
* He: 11 sccm | * He: 11 sccm | ||
* | * CO<sub>2</sub>: (It is not in the software) | ||
|ItemComment= | |ItemComment=OnlySF<sub>6</sub> and O<sub>2</sub> are used for Si, PR, and Cr etch. The rest is only make-up | ||
}} | }} | ||
Revision as of 10:27, 14 December 2020
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This system is a research tool and not available to the users
If you want to get access to the tool, then talk to professor Henry Jansen
Current setup and rules on Pegasus 2
Click here to access older configurations.
The current configuration is
Access to Pegasus 2 configuration templates
Pegasus 2 configuration table version 1
- Table header: Template:Peg2configheader1
- Table content: Template:Peg2configcontent1
| Item | The currently applied modification | Comments |
|---|---|---|
| Available gasses and gas chemistry | .
|
OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up |