Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3: Difference between revisions

Revision as of 10:47, 4 November 2020

Feedback to this page: click here

Pegasus 3 - 150mm silicon etching

The tool is already installed and ready to process.

The twin Pegasi (3 and 4) have just been rolled into the lab on July 3rd 2018.

The user manual(s), quality control procedure(s) and results, user APV(s) are not available, technical information and contact information can be found in LabManager:

Equipment info in LabManager

Process information

Standard recipes

Barc etch

Hardware changes

A few hardware modifications have been made on the Pegasus 3/4 since it was installed in 2019. The changes are listed below.

Change of showerhead in 2019

Addition of Picoscope oscilloscope system for process monitoring in February 2019

Other etch processes

Continuous nanostructure etches including nano1.42

Etch processes with DUV masks

BARC etches

Isotropic etches

More processes, such as for DUV resist, are currently being developed, but they are not quite 'ready for publication' at LabAdviser so please contact Jonas (mailto:jmli@dtu.dk) for more information.

Advanced Processing - Henri Jansen style

Wafer bonding

To find information on how to bond wafers or chips to a carrier wafer, click here.

Acceptance test

The instrument was opened for users in April 2010 when the acceptance test was signed. This was based on the performance of five standard recipes (A, B, C, D and SOI) that are further examined below. The acceptance test report is found here.

Characterisation of etched trenches

Comparing differences in etched trenches requires a set of common parameters for each trench. Click HERE to find more information about the parameters used on the DRIE-Pegasus process development.

Internal Nanolab Process log for Pegasus 1

Process log at Nanolab [1]

@@ Line 1: / Line 1: @@
 '''Feedback to this page:
-[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus click here]'''
+[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-3 click here]'''
 [[Category: Equipment |Etch DRIE]]
 [[Category: Etch (Dry) Equipment|DRIE]]
@@ Line 6: / Line 6: @@
 <!--Checked for updates on 2/10-2020 - ok/jmli -->
-'''This page will soon be updated'''
+==Pegasus 3 - 150mm silicon etching==
+'''The tool is already installed and ready to process. '''
+[[Image:Twinx.jpg |frame|left|x300px|The twin Pegasi (3 and 4) have just been rolled into the lab on July 3rd 2018. ]]
+The user manual(s), quality control procedure(s) and results, user APV(s) '''are not available''', technical information and contact information can be found in LabManager:
+Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=455| LabManager]
+== Process information ==
+'''[[Specific Process Knowledge/Etch/DRIE-Pegasus 4/StandardRecipes|Standard recipes]]'''
+*[[Specific Process Knowledge/Etch/DRIE-Pegasus 4/Barc etch |Barc etch]]
+'''Hardware changes'''
+A few hardware modifications have been made on the Pegasus 3/4 since it was installed in 2019. The changes are listed below.
+*[[Specific Process Knowledge/Etch/DRIE-Pegasus 4/showerheadchange|Change of showerhead in 2019]]
+*[[Specific Process Knowledge/Etch/DRIE-Pegasus 4/picoscope|Addition of Picoscope oscilloscope system for process monitoring in February 2019]]
+=== Other etch processes ===
+*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch|Continuous nanostructure etches including nano1.42]]
+*[[Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch|Etch processes with DUV masks]]
+*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Barc|BARC etches]]
+*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Isotropic|Isotropic etches]]
+More processes, such as for DUV resist, are currently being developed, but they are not quite 'ready for publication' at LabAdviser so please contact Jonas (mailto:jmli@dtu.dk) for more information.
+ <!--  *[[Specific Process Knowledge/Etch/DRIE-Pegasus/slopedsidewalls|Etches that produce positively sloped sidewalls for imprinting purposes]] -->
+ <!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/Waferthinning| Maskless reduction of wafer thicknesses]] -->
+ <!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/VeeryDeeep| Very deep etching]] -->
+=== Advanced Processing - Henri Jansen style ===
+* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch silicon nanostructures|Etch silicon nanostructures ]]
+* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch high aspect ratio silicon microstructures|Etch high aspect ratio silicon microstructures ]]
+* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch 3 dimensional silicon microstructures|Etch 3 dimensional silicon microstructures]]
+* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch black silicon|Etch black silicon]]
+* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Using OES to monitor etch process|Using OES to monitor etch process]]
+=== Wafer bonding ===
+To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]].
+=== Acceptance test ===
+The instrument was opened for users in April 2010 when the acceptance test was signed. This was based on the performance of five standard recipes (A, B, C, D and SOI) that are further examined below. The acceptance test report is found [[Media:Pegasus_AcceptanceTest.pdf|here]].
+'''Characterisation of etched trenches'''
+Comparing differences in etched trenches requires a set of common parameters for each trench. Click [[Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation|'''HERE''']] to find more information about the parameters used on the DRIE-Pegasus process development.
+'''Internal Nanolab Process log for Pegasus 1'''
+Process log at Nanolab [http://labintra.nanolab.dtu.dk/index.php/Main_Page/Process_Logs/jmli/Pegasus]