Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
| Line 99: | Line 99: | ||
|± 0.3-0.5%<!-- Unif. [%] --> | |± 0.3-0.5%<!-- Unif. [%] --> | ||
|Compressive: 250.5 MPa<!-- Stress [MPa] --> | |Compressive: 250.5 MPa<!-- Stress [MPa] --> | ||
|[[/HF_SiO2 results|Click for more results]<!-- Comments --> | |[[/HF_SiO2 results|Click for more results]]<!-- Comments --> | ||
|10<!-- SiH4 [sccm] --> | |10<!-- SiH4 [sccm] --> | ||
|1420<!-- N2O [sccm] --> | |1420<!-- N2O [sccm] --> | ||