Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy/AFM Icon Acceptance: Difference between revisions
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===Step measurement: Resist on silicon oxide=== | ===Step measurement: Resist on silicon oxide=== | ||
SIO2ICP_30 (Si-SiO2-Resist) | |||
*When scanning long lines and trenches scan 90 degrees to the probe and 90 degrees to the lines. | |||
*During acceptance: | |||
**Tapping mode: 3 µm structures (middle): 1.587µm | |||
**Tapping mode: 3µm structures (edge): 1.541µm | |||
**Peak Force tapping 3µm structures (edge) average: 1.497µm (tapping mode probe) | |||
**Peak Force tapping with ScanAsyst probe: 1.509µm | |||
SEM images showed about 1.55µm – so it seems like ScanAsyst is pressing a little down in the resist compared with the SiO2 giving a too small height difference. | |||
Therefor When scanning steps with difference materials, when one of the materials is soft and you need to know the height difference, then it seems to be best to use tapping mode. | |||