Specific Process Knowledge/Thin film deposition: Difference between revisions
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[[/Deposition of Silicon|Silicon]] <br/> | |||
[[/Deposition of Germanium|Germanium]] <br/> | |||
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[[/Deposition of Alumina|Aluminium Oxide (Al<sub>2</sub>O<sub>3</sub>)]]<br/> | [[/Deposition of Alumina|Aluminium Oxide (Al<sub>2</sub>O<sub>3</sub>)]]<br/> | ||
[[/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|Barium titanate (BaTiO<sub>3</sub>)]]<br/> | [[/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|Barium titanate (BaTiO<sub>3</sub>)]]<br/> | ||
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[[/Deposition of ZnO|Zinc Oxide (ZnO)]]<br/> | [[/Deposition of ZnO|Zinc Oxide (ZnO)]]<br/> | ||
Revision as of 08:40, 11 May 2020
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Choose material to deposit
Oxides | Semicondutors | Metals | Nitrides | Alloys | Transparent conductive oxides | Polymers |
Aluminium Oxide (Al2O3)
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Aluminium
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Silicon Nitride - and oxynitride |
AlCu And an electroceramic: YSZ (Yttrium stabilized zirconia) |
ITO (Tin doped Indium Oxide) |
SU-8 |
Choose deposition equipment
PVD | LPCVD | PECVD | ALD | Coaters | Others
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See the Lithography/Coaters page for coating polymers |
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