Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions
Appearance
No edit summary |
No edit summary |
||
| Line 30: | Line 30: | ||
'''Submicron silicon pillars derived from the fine-tuned CORE sequence.''' | '''Submicron silicon pillars derived from the fine-tuned CORE sequence.''' | ||
[[File:Fig 13d.png|800px]] | [[File:Fig 13d-1.png|800px]] | ||
'''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.''' | '''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.''' | ||