Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/Si Nano etching: Difference between revisions
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[[File:Fig 13a.png|800px]] | [[File:Fig 13a.png|800px]] | ||
'''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | '''''Submicron silicon trenches and lines derived from the fine-tuned CORE sequence.''''' | ||
[[File:Fig 13b.png|800px]] | [[File:Fig 13b.png|800px]] | ||
'''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''' | '''Submicron silicon holes derived from the fine-tuned CORE sequence. The side wall angle is ca. 2°.''' | ||
[[File:Fig 1ca.png|800px]] | [[File:Fig 1ca.png|800px]] | ||
'''Submicron silicon pillars derived from the fine-tuned CORE sequence.''' | '''Submicron silicon pillars derived from the fine-tuned CORE sequence.''' | ||
'''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.''' | '''Notch-free nanostructures in SOI material derived from the fine-tuned CORE sequence Left) Grating with 80 nm periodicity. Right) RIE lag test structure between 30 and 100 nm.''' | ||