Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
→Comparison of the methods for deposition of Silicon: moved PECVD column next to LPCVD column |
m minor corrections |
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* [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si|Si deposition in IBE⁄IBSD Ionfab300]] | * [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si|Si deposition in IBE⁄IBSD Ionfab300]] | ||
* [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|Si sputter deposition in the Wordentec]] | * [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|Si sputter deposition in the Wordentec]] | ||
* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|Si sputter deposition in the Sputter-System (Lesker)]] | * [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|Si sputter deposition in the Sputter-System (Lesker)]] - ''includes information on surface roughness and stress'' | ||
==Deposition of Silicon using PECVD== | ==Deposition of Silicon using PECVD== | ||
At Nanolab you can also deposit silicon the using PECVD. The deposition temperature is 300 | At Nanolab you can also deposit silicon the using PECVD. The deposition temperature is 300 °C. | ||
* [[/Si deposition using PECVD|Si deposition using PECVD3]] | * [[/Si deposition using PECVD|Si deposition using PECVD3]] | ||
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! Layer thickness | ! Layer thickness | ||
|~ | |~5 nm to 2 µm, if thicker layers are needed please ask the furnace team. | ||
|few nm to ~ | |few nm to ~ 300 nm | ||
|few | |few nm to ~ 300 nm | ||
|No defined limits | |No defined limits | ||
|few nm to >200 nm | |few nm to >200 nm | ||
|few nm to ? | |few nm to ? | ||
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! Deposition rate | ! Deposition rate | ||
| | | | ||
*undoped, boron doped:~ | *undoped, boron doped:~100 Å/min | ||
*Phosphorous doped:~ | *Phosphorous doped:~20 Å/min | ||
|~ | |~6 Å/s can probably be higher | ||
| | | | ||
On the order of 1 Å/s dependent on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | On the order of 1 Å/s dependent on process parameters. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | ||