Specific Process Knowledge/Characterization/Stress measurement: Difference between revisions

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 =Stress measurement=
-The stress in a thin film can be quantified with a profilometer by measuring the wafer bow before and after deposition of a thin film. If the then film is deposited on both sides of the wafer, you can measure the bow after deposition and again after removing the film from one of the sides.
+The stress in a thin film can be quantified with a profilometer by measuring the wafer bow before and after deposition of the film. If the thin film is deposited on both sides of the wafer, you can measure the bow after deposition and again after removing the film from one of the sides.
-If your thin film is are crystalline, you can also measure stress using XRD (see below). It is more time consuming but may be more accurate.
+If your thin film is crystalline, you can also measure stress using XRD (see below).
 ==Stress measurement using a profilometer==