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| The Lesker CMS 18 sputter system can produce films in a wide range of qualities. The quality of a film depends strongly on the substrate (lattice matching), but also on the energy the sputtered material can utilize for annealing. | | The Lesker CMS 18 sputter system can produce films in a wide range of qualities. The quality of a film depends strongly on the substrate (lattice matching), but also on the energy the sputtered material can utilize for annealing. |
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| Strain estimations was done on 30 nm Ni<math>_{81}</math>Fe<math>_{19}</math> thin films using low angle x-ray diffraction, for various substrates. It was found that the strain of the film influenced the resistance (R) and anisotropic magneto resistance (AMR) of the films (this relationship is also documented in literature); A Ta interface layer reduced R and increased AMR on both Si and SiO<math>_2</math> substrates while reducing strain.
| | You will find detailed information on film quality optimization for NiFe films [[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_NiFe|here]]. |
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| This study was then done on 30 nm Ni<math>_{81}</math>Fe<math>_{19}</math> thin films deposited on 3 nm Ta on top of a SiO<math>_2</math> substrate, using R and AMR as an indication of strain. As seen in the tables, applying a substrate bias increases AMR and conductance (1/R). An equivalent effect is seen when heating the substrate during deposition. This heating can also be done after deposition without loosing the effect.
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| {| {{table}} border="1" cellspacing="0" cellpadding="8"
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| | align="center" style="background:#f0f0f0;"|'''Name'''
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| | align="center" style="background:#f0f0f0;"|'''Substrate bias (W)'''
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| | align="center" style="background:#f0f0f0;"|'''AMR'''
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| | align="center" style="background:#f0f0f0;"|'''1/R (S)'''
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| | align="center" style="background:#f0f0f0;"|'''Crystal strain'''
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| |-
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| | 0029 NiFe3_stack_RF20||20||0.02724278||1.308044474||
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| |-
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| | 0018_NiFe1_stack_RF||10||0.025850358||0.898311175||
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| |-
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| | 0030 NiFe3_stack||0||0.020103598||0.71772052||0.8
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| |-
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| |}
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| {| {{table}} border="1" cellspacing="0" cellpadding="8"
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| | align="center" style="background:#f0f0f0;"|'''Name'''
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| | align="center" style="background:#f0f0f0;"|'''Temperature (C)'''
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| | align="center" style="background:#f0f0f0;"|'''AMR'''
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| | align="center" style="background:#f0f0f0;"|'''1/R (S)'''
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| | align="center" style="background:#f0f0f0;"|'''Crystal strain'''
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| |-
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| | 0030 NiFe3_stack||25||0.020103598||0.71772052||0.8
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| |-
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| | BDT-NiFe1-blank30||200||0.019319002||1.095770327||
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| |-
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| | BTD-NiFe-Blank22||250||0.021768497||1.047668937||
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| |-
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| | BTD-NiFe-Blank14||300||0.02983617||1.724137931||
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| |-
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| | BTD-NiFe-Blank13||350||0.033944331||1.887504719||
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| |-
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| | BTD-NiFe-Blank15||400||0.031176801||1.655903295||0.2
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| |-
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| | BTD-NiFe-Blank16||450||0.030843457||||
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| |-
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| |}
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| ==Surface roughness optimization== | | ==Surface roughness optimization== |
