Specific Process Knowledge/Thin film deposition: Difference between revisions
Line 56: | Line 56: | ||
[[/Lesker|MnIr]]<br/> | [[/Lesker|MnIr]]<br/> | ||
[[/Lesker|NiCo]]<br/> | [[/Lesker|NiCo]]<br/> | ||
[[/Deposition of NiFe|NiFe]]<br/> | [[/Deposition of NiFe|NiFe (e.g., Invar)]]<br/> | ||
[[/Lesker|YSZ (Yttrium stabilized Zirconium)]]<br/> | [[/Lesker|YSZ (Yttrium stabilized Zirconium)]]<br/> | ||
|style="background: LightGray"| | |style="background: LightGray"| |
Revision as of 12:58, 24 March 2020
Feedback to this page: click here
Choose material to deposit
Dielectrica | Semicondutors | Metals | Alloys | Transparent conductive oxides | Polymers |
Silicon Nitride - and oxynitride |
Aluminium |
TiW alloy (10%/90% by weight) |
ITO (Tin doped Indium Oxide) |
SU-8 |
Choose deposition equipment
PVD | LPCVD | PECVD | ALD | Coaters | Others
|
|
|
|
|
See the Lithography/Coaters page for coating polymers |
|