Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions
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= Sputter-System Metal-Oxide(PC3) = | == Sputter-System Metal-Oxide(PC3) == | ||
The purpose of the sputter is to deposit magnetic metals and dielectrica on a single 4" or 6" wafer at a time. | The purpose of the sputter is to deposit magnetic metals and dielectrica on a single 4" or 6" wafer at a time. | ||