Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

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====Quality Control (QC)====
====Quality Control (QC)====
'''THIS SECTION IS UNDER CONSTRUCTION''' [[Image:section under construction.jpg|70px]]
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: MA6-2'''
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: MA6-2'''

Revision as of 13:03, 18 March 2020

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UV Exposure Comparison Table

Equipment KS Aligner Aligner: MA6 - 2 Aligner: Maskless 01 Aligner: Maskless 02 Aligner: Maskless 03 Inclined UV Lamp
Purpose
  • Top Side Alignment
  • Back Side Alignment
  • UV exposure
  • Top Side Alignment
  • Back Side Alignment
  • UV exposure
  • (DUV exposure)
  • Bond alignment
  • Top Side Alignment
  • Maskless UV exposure
  • Top Side Alignment
  • Back Side Alignment
  • Maskless UV exposure
  • Top Side Alignment
  • Back Side Alignment
  • Maskless UV exposure
  • UV exposure
  • DUV exposure
Performance Minimum feature size
  • 1.5µm down to 1µm
  • 1.5µm down to 0.5µm
  • 2µm down to 1µm
  • 1µm down to 0.6µm
  • 2µm down to 1µm
Exposure light/filters/spectrum
  • 350W Hg lamp
  • i-line filter (365nm notch filter), intensity in Constant Intensity mode: 8mW/cm2 @ 365nm
  • 303nm filter optional
  • 500W Hg-Xe lamp
  • i-line filter (365nm notch filter), intensity in Constant Intensity mode: 11mW/cm2 @ 365nm
  • UV350 optics optional
  • UV250 optics optional
  • 365nm LED
  • 375nm laserdiodes

or

  • 405nm laserdiodes
  • 405nm laserdiodes
  • 1000 W Hg-Xe lamp
  • near UV (350-450nm), mid UV (260-320nm), and deep UV (220-260nm)
Exposure mode
  • Proximity
  • Contact
    • Soft contact
    • Hard contact
    • Vacuum contact
  • Proximity
  • Contact
    • Soft contact
    • Hard contact
    • Vacuum contact
  • Projection
    • Pneumatic auto-focus
  • Projection
    • Optical auto-focus
    • Pneumatic auto-focus
  • Projection
    • Pneumatic auto-focus
  • Flood exposure
  • Proximity exposure with home-made chuck and maskholder
  • Inclined exposure
  • Rotating exposure
Substrates Batch size
  • 1 small sample
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 small sample
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 small sample, down to 5x5 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 small sample, down to 3x3 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 200 mm wafer
  • 1 small sample, down to 5x5 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • all sizes up to 8inch
Allowed materials
  • All cleanroom materials except copper and steel
  • Dedicated 2inch chuck for III-V materials
  • All cleanroom materials except copper and steel
  • Dedicated chuck for III-V materials
  • All cleanroom materials
  • All cleanroom materials
  • All cleanroom materials
  • All cleanroom materials


KS Aligner

The KS Aligner is placed in E-4

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SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.

Training videos: Operation Alignment (on Aligner: MA6-2, but KS Aligner is the same model)

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.

Process information

The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch.


Quality Control (QC)

Quality Control (QC) for KS Aligner
QC Recipe: Manual intensity measurement
Measurement area 4"
Number of measurements 5
QC limits KS Aligner
Nominal intensity 8 mW/cm2 @ 365 nm
Intensity deviation from nominal ≤5%
Intensity non-uniformity ≤2%

Power supply and/or lamp will be adjusted if intensity is outside the limit.

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

vacuum contact, hard contact, soft contact, proximity, flood exposure

Exposure light/filters
  • broadband (i-, g-, h-line)
  • 365 nm (i-line)
  • 303 nm
Minimum structure size

down to 1.25µm

Mask size
  • 5x5 inch
  • 7x7 inch
  • special holder for 4 x 2" designs on 5x5 inch
Alignment modes
  • Top side (TSA)
  • Backside (BSA)
Substrates Substrate size
  • small pieces 1x1cm
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All cleanroom materials

Dedicated chuck for III-V materials

Batch

1


Aligner: MA6 - 2

The Aligner: MA6 - 2 is placed in E-4

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The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.

The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.

Training videos: Operation Alignment

The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager.

Process information

The Aligner: MA6 - 2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.


Quality Control (QC)

Quality Control (QC) for Aligner: MA6-2
QC Recipe: Manual intensity measurement
Measurement area 4"
Number of measurements 5
QC limits Aligner: MA6-2
Nominal intensity 11 mW/cm2 @ 365 nm
Intensity deviation from nominal ≤5%
Intensity non-uniformity ≤2%

Power supply and/or lamp will be adjusted if intensity is outside the limit.

Alignment

Top Side Alignment:

  • TSA microscope standard objectives: 5X, and 10X (20X available)
  • TSA microscope special objectives: 11.25X offset (for smaller separation)
  • Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
  • Maximum distance between TSA microscope objectives: 160 mm
  • TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)

BackSide Alignment:

  • Minimum distance between BSA microscope objectives: 15 mm
  • Maximum distance between BSA microscope objectives: 100 mm
  • BSA microscope travel range: X +50mm / -16mm; Y +50mm / -20mm (towards flat)
  • BSA chuck view ranges:
    • 2": X +/- 8-22mm; Y +/- 0-6mm
    • 4": X +/- 14-46mm; Y +/- 0-10mm
    • 6": X +/- 14-69mm; Y +/- 0-10mm


Microscope field of view (W x H, splitfield):

  • TSA 5X
    • Oculars: 1.3mm x 2.6mm (Ø2.6mm full field)
    • Camera: 350µm x 500µm (700µm x 500µm full field)
  • TSA 10X
    • Oculars: 0.6mm x 1.3mm (Ø1.3mm full field)
    • Camera: 150µm x 250µm (350µm x 250µm full field)
  • TSA special
    • Oculars: 0.55mm x 1.1mm (Ø1.1mm full field)
    • Camera: 150µm x 200µm (300µm x 200µm full field)
  • BSA camera
    • Low: 1.5mm x 2mm (3mm x 2mm full field)
    • High: 450µm x 650µm (950µm x 650µm full field)


Equipment performance and process related parameters

Purpose

Mask alignment and UV exposure, potentially DUV exposure 1)

Bond alignment

Performance Exposure mode

vacuum contact, hard contact, soft contact, proximity, flood exposure

Exposure light/filters
  • broadband (i-, g-, h-line)
  • 365 nm (i-line)
  • "UV300" (280-350 nm)
  • DUV (240 nm) 1)
Minimum structure size

Typically 1.25 µm, possibly down to 0.8 µm 1)

Mask size
  • 5x5 inch
  • 7x7 inch
  • special holder for 4 x 2" designs on 5x5 inch
Alignment modes
  • Top side (TSA)
  • Backside (BSA)
Substrates Substrate size
  • small pieces 1x1cm
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All cleanroom materials except copper and steel

Dedicated chuck for III-V materials

Batch

1

1) Not available yet.


Aligner: Maskless 01

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Aligner: Maskless 01 positioned in E-4

The MLA 100 Maskless Aligner located in the E-5 cleanroom is a direct exposure lithography tool. It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask. The system offers top side alignment with high accuracy.

The user manual and contact information can be found in LabManager: Equipment info in LabManager

Process information

Exposure technology

Process parameters

Substrate positioning

Alignment

Optimal use of the maskless aligner

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

Projection

Exposure light

365nm (LED), FWHM=8nm

Focusing method

Pneumatic

Minimum structure size

down to 1µm

Design formats
  • GDS-II
  • CIF
  • DXF
  • Gerber
  • HIMT format
Alignment modes

Top side only

Substrates Substrate size
  • maximum writing area: 125x125 mm2
  • 150 mm wafer
  • 100 mm wafer
  • 50 mm wafer
  • pieces down to 5x5 mm2
Allowed materials

All cleanroom materials

Batch

1


Aligner: Maskless 02

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MLA150 WMI maskless aligner from Heidelberg Instruments GmbH.

Special features:

  • High resolution (Write Mode I, including Optical Autofocus)
  • Backside Alignment
  • Basic Gray Scale Exposure
  • Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
  • High Aspect Ratio Mode for exposure of thick resists
  • Upgrade to 8" (stage and exposure area)

Equipment info in LabManager

Process information

Exposure technology

Process Parameters

Features

Alignment

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

Projection

Exposure light
  • 375nm
  • 405nm

(laser diode arrays)

Focusing method
  • Optical
  • Pneumatic
Minimum structure size

down to 600nm 1)

Design formats
  • GDS-II
  • CIF
  • DXF
  • Gerber
  • HIMT format
Alignment modes
  • Top side alignment
  • Backside alignment
  • Field alignment (chip-by-chip TSA)
Substrates Substrate size
  • maximum writing area: 200x200 mm2
  • 200 mm wafer
  • 150 mm wafer
  • 100 mm wafer
  • 50 mm wafer
  • pieces down to 3x3 mm2 1)
Allowed materials

All cleanroom materials

Batch

1

1) with optical autofocus


Aligner: Maskless 03

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MLA150 WMII maskless aligner from Heidelberg Instruments GmbH.

Special features:

  • Backside Alignment
  • Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate

Equipment info in LabManager

Process information

Exposure technology

Process Parameters

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

Projection

Exposure light

405nm (laser diode array)

Focusing method

Pneumatic

Minimum structure size

down to 1µm

Design formats
  • GDS-II
  • CIF
  • DXF
  • Gerber
  • HIMT format
Alignment modes
  • Top side alignment
  • Backside alignment
  • Field alignment (chip-by-chip TSA)
Substrates Substrate size
  • maximum writing area: 150x150 mm2
  • 150 mm wafer
  • 100 mm wafer
  • 50 mm wafer
  • pieces down to 5x5 mm2
Allowed materials

All cleanroom materials

Batch

1


Inclined UV Lamp

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Inclined UV lamp is placed in CX-1

The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.

The tool was purchased in February 2009 from Newport. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at DTU Nanolab workshop.

The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.

The technical specification and the general outline of the equipment can be found in LabManager.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager.


Equipment performance and process related parameters

Purpose

UV exposure

Performance Exposure mode
  • Flood exposure
  • Proximity exposure with mask possible for 4inch substrate
  • Inclined exposure
  • Rotating exposure
Exposure light/filters
  • Near UV(350-450nm)
  • Mid UV (260-320nm)
  • Deep UV(220-260nm)
Minimum structure size
Mask size

5x5inch optinal

Alignment modes

No alignment possible

Substrates Substrate size

Up to 8inch substrates, different shapes

Allowed materials

All cleanroom materials

Batch

1


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