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Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=250 6" LPCVD nitride furnace (E3)]
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=250 6" LPCVD nitride furnace (E3)]
== Manual for the furnace computer to the A, B, C and E stack furnaces ==
The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here:
[[media:Furnace_computer_manual.pdf|Manual for furnace computers for the A, B, C and E stack furnaces]]




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*[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]]
*[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]]


== Manual for the furnace computer to the A, B, C and E stack furnaces ==
The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here:
[[media:Furnace_computer_manual.pdf|Manual for furnace computers for the A, B, C and E stack furnaces]]


==Equipment performance and process related parameters==
==Equipment performance and process related parameters==