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Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,531 edits
Line 559: Line 559:
| style="background:LightGrey; color:black"|Exposure light
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*405nm (laser diode array)
405nm (laser diode array)
|-
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
*Pneumatic
Pneumatic
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:LightGrey; color:black"|Minimum structure size
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