Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
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[[Image:C3.JPG|thumb|300x300px|Anneal-bond furnace (C3). Positioned in cleanroom B-1]] | [[Image:C3.JPG|thumb|300x300px|Anneal-bond furnace (C3). Positioned in cleanroom B-1]] | ||
The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. | The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O<sub>2</sub>) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler. | ||
This furnace is the third tube in the furnace C-stack positioned in cleanroom B-1. | This furnace is the third tube in the furnace C-stack positioned in cleanroom B-1. | ||