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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

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[[Image:teos1.jpg|300x300px|thumb|Figure 1: TEOS structure]]
[[Image:teos1.jpg|300x300px|thumb|Figure 1: TEOS structure]]
[[Image:teos2.jpg|300x300px|thumb|Figure 2: TEOS deposited in a trench etched in Silicon]]
[[Image:teos2.JPG|300x300px|thumb|Figure 2: TEOS deposited in a trench etched in Silicon]]
Danchip have one [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS|LPCVD furnace]] for deposition of TEOS: The furnace was installed in 1995 and can handle 4" wafers. It is furthermore possible to dope the TEOS with either Boron or phosphorous.  
Danchip have one [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS|LPCVD furnace]] for deposition of TEOS: The furnace was installed in 1995 and can handle 4" wafers. It is furthermore possible to dope the TEOS with either Boron or phosphorous.  


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