Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions
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H<sub>2</sub>SO<sub>4</sub>(10%):H<sub>2</sub>O<sub>2</sub>(30%):H<sub>2</sub>O is a selective etch of InGaAsP with very low etch rate in InP. '''The acronym PQ(1.n) denotes a lattice-matched InGaAsP on InP with a band gap corresponding to a wavelength of 1.n um.''' | H<sub>2</sub>SO<sub>4</sub>(10%):H<sub>2</sub>O<sub>2</sub>(30%):H<sub>2</sub>O is a selective etch of InGaAsP with very low etch rate in InP. '''The acronym PQ(1.n) denotes a lattice-matched InGaAsP on InP with a band gap corresponding to a wavelength of 1.n um.''' | ||
The etch rates have not yet been calibrated at DTU | The etch rates have not yet been calibrated at DTU Nanolab. | ||
The temperature is 22 degC +/- 1 degC. | The temperature is 22 degC +/- 1 degC. | ||