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Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions

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'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon) click here]'''
'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon) click here]'''


[[Category: Equipment|Thin film LPCVD Poly]]
[[Category: Equipment|Thin film LPCVD Poly]]
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[[Image:E2.JPG|300x300px|thumb|6" polysilicon furnace located (E2) in cleanroom E-6]]
[[Image:E2.JPG|300x300px|thumb|6" polysilicon furnace located (E2) in cleanroom E-6]]


Danchip has two furnaces for deposition of LPCVD (Low Chemical Vapour Deposition) silicon: A 6" furnace (installed in 2011) for deposition of standard polySi, amorphous Si and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for deposition of standard polySi, amorphous Si, boron- and phosphorous doped polySi on 100 mm wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively. Both furnaces are Tempress horizontal furnaces.  
DT Nanolab has two furnaces for deposition of LPCVD (Low Chemical Vapour Deposition) silicon: A 6" furnace (installed in 2011) for deposition of standard polySi, amorphous Si and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for deposition of standard polySi, amorphous Si, boron- and phosphorous doped polySi on 100 mm wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively. Both furnaces are Tempress horizontal furnaces.  


The LPCVD silicon deposition is a batch process, where silicon is deposited on a batch of 25 or 50 wafers (6" polySi furnace) or 30 wafers (4" polySi furnace). The silicon has a good step coverage, and especially for standard polySi the film thickness is very uniform over the wafers.  
The LPCVD silicon deposition is a batch process, where silicon is deposited on a batch of 25 or 50 wafers (6" polySi furnace) or 30 wafers (4" polySi furnace). The silicon has a good step coverage, and especially for standard polySi the film thickness is very uniform over the wafers.  
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'''The user manuals, quality control procedures and results, technical information and contact information can be found in LabManager:'''
'''The user manuals, quality control procedures and results, technical information and contact information can be found in LabManager:'''


'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=86 4" LPCVD polysilicon furnace (B4)]'''
'''[http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=86 4" LPCVD polysilicon furnace (B4)]'''


'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=291 6" LPCVD polysilicon furnace (E2)]'''
'''[http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=291 6" LPCVD polysilicon furnace (E2)]'''


==Process information==
==Process information==
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