Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

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-'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Phosphorus click here]'''
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Phosphorus click here]'''
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 ====Experimental setup====
 '''
-boron doped device wafers (p-type) were used - Four wafers for each of the five different predeposition temperatures (see table below). In the furnace five dummy wafers were placed on each side of the device wafers. The dummy wafers nearest to the device wafers were changed in-between the runs to miniminze doping from these dummy wafers.
+boron doped device wafers (p-type) were used - Four wafers for each of the five different predeposition temperatures (see table below). In the furnace five dummy wafers were placed on each side of the device wafers. The dummy wafers nearest to the device wafers were changed in-between the runs to minimize doping from these dummy wafers.
 {| border="1" cellspacing="1" cellpadding="2" style="text-align:center;" width="690" ||3||4||5
 !| Run #||Temperature||Process time with POCl<sub>3</sub>||Annealing time in O<sub>2</sub>||Wafer #
 |-
-|1||850 <sup>o</sup>C||15 minutes||20 miuntes||1, 2, 3, 4
+|1||850 <sup>o</sup>C||15 minutes||20 minutes||1, 2, 3, 4
 |-
-|2||900 <sup>o</sup>C||15 minutes||20 miuntes||5, 6, 7, 8
+|2||900 <sup>o</sup>C||15 minutes||20 minutes||5, 6, 7, 8
 |-
-|3||950 <sup>o</sup>C||15 minutes||20 miuntes||9, 10, 11, 12
+|3||950 <sup>o</sup>C||15 minutes||20 minutes||9, 10, 11, 12
 |-
-|4||1000 <sup>o</sup>C||15 minutes||20 miuntes||13, 14, 15, 16
+|4||1000 <sup>o</sup>C||15 minutes||20 minuntes||13, 14, 15, 16
 |-
-|5||1050 <sup>o</sup>C||15 minutes||20 miuntes||17, 18, 19, 20
+|5||1050 <sup>o</sup>C||15 minutes||20 minutes||17, 18, 19, 20
 |}
 '''
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 ! width="130" | Temperature [C]
 ! width="130" | Oxide thickness [nm]
-! width="130" | Refrative index
+! width="130" | Refractive index
 ! width="150" | Sheet resistance [&Omega;<sub>sq</sub>]
 ! width="150" | Slice Resistivity [&Omega;cm]
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 ! width="130" | Temperature [<sup>o</sup>C]
 ! width="130" | Oxide thickness [nm]
-! width="130" | Refrative index
+! width="130" | Refractive index
 ! width="150" | Sheet resistance [&Omega;<sub>sq</sub>]
 ! width="150" | Slice Resistivity [&Omega;cm]
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 |}
-Looking at the "SIMS Measurement After Drive-in Process at 1050 <sup>o</sup>C" graph, it can be seen that the two curves "Pre-dep at 950 <sup>o</sup>C" and "Pre-dep at 1000 <sup>o</sup>C" are crossing each other, but according to the theory they should not do that. Only one wafer has been meassured, so there is not that much statistical data to verify it with.
+Looking at the "SIMS Measurement After Drive-in Process at 1050 <sup>o</sup>C" graph, it can be seen that the two curves "Pre-dep at 950 <sup>o</sup>C" and "Pre-dep at 1000 <sup>o</sup>C" are crossing each other, but according to the theory they should not do that. Only one wafer has been measured so there is not that much statistical data to verify it with.
 ==Test of the Phosphorus Predep furnace==
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 '''
-To find the result of a specific process using the Phosphorus Predep furnace (A4) followed by a drive in and oxidating the substrate in the Phosphorous drive in furnace (A3).
+To find the result of a specific process using the Phosphorus Predep furnace (A4) followed by a drive in and oxidating the substrate in the Phosphorus drive in furnace (A3).
 '''