Jump to content

Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions

← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 68: Line 68:


</gallery>
</gallery>
=== InP etch with Cl2/H2 and a Si carrier wafer===
=== InP etch with Cl2/H2 and a Si carrier wafer [[Image:section under construction.jpg|70px]] ===
{| border="1" cellspacing="2" cellpadding="3"  
{| border="1" cellspacing="2" cellpadding="3"  
|'''Recipe name'''
|'''Recipe name'''
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/III-V_ICP/InP-InGaAsP-InGaAs"