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Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,531 edits
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,531 edits
Line 386: Line 386:
===THIS SECTION IS UNDER CONSTRUCTION===
===THIS SECTION IS UNDER CONSTRUCTION===
[[Image:section under construction.jpg|70px]]
[[Image:section under construction.jpg|70px]]
Special features:
*High resolution (Write Mode I, including optical autofocus)
*Back side alignment
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*High Aspect Ratio Mode for exposure of thick resists
*Upgrade to 8" (stage and exposure area)


Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=440 LabManager]
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=440 LabManager]
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/UVExposure"