Specific Process Knowledge/Thermal Process: Difference between revisions
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*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace(C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | *[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace(C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | ||
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | *[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | ||
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing of wafers containing aluminium, | *[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing of wafers containing aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> '' | ||
*[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers'' | *[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers'' | ||
*[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers'' | *[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers'' | ||
Revision as of 11:50, 28 March 2019
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Choose a process type
- Oxidation - Grow a thermal oxide on silicon
- Annealing
- Doping with Boron
- Doping with Phosphorus
Choose an equipment to use
- Boron Drive-in + Predep furnace (A1) - For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards
- Gate Oxide furnace (A2) - For gate oxide growing on new wafers
- Phosphorus Drive-in furnace (A3) - For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep
- Phosphorus Predep furnace (A4) - For pre-deposition (doping) of phosphorus on Si wafers
- Anneal-oxide furnace(C1) - For oxidation and annealing of 100 mm and 150 mm wafers
- Anneal-bond furnace (C3) - For oxidation and annealing of bonded wafers
- Aluminium Anneal furnace (C4) - For annealing of wafers containing aluminium, Al2O3 and TiO2
- Noble furnace - For annealing and oxidation of non-clean wafers
- APOX furnace - For growing of very thick oxide layers
- Jipelec RTP - For rapid thermal annealing of III-V materials and Si based materials
- BCB Curing oven - For resist curing and metal alloying
- Furnace: Multipurpose annealing - For annealing, oxidation and resist pyrolysis
- Resist Pyrolysis furnace - For pyrolysis of different resist layers
- III-V Oven (D4) - For oxidation of AlxGaAs layers.