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| == Aligner-6inch ==
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| '''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch click here]'''
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| [[Image:EVG620.jpg|300x300px|thumb|right|Aligner-6inch EVG620 is placed in E-5]]
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| Aligner-6inch, EVG620 aligner, is designed for high resolution photolithography.
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| The machine can be used for 2, 4 and 6 inch substrates. Cassette-to-cassette handling option is available only for 6inch substrates.
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| The automatic pattern recognition software is available for the special alignment marks design recommended of EVGroup. Please contact Danchip staff for further information.
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| Available exposure mode: proximity, soft, hard and vacuum contact.
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| Two alignment options are available: top side alignment (TSA) and back side alignment (BSA). IR-light alignment also an option.
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| '''The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=201 LabManager]'''
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| ===Process information===
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| The Aligner-6inch has a long pass filter designed for SU-8 exposure installed. The SU-8 filter has no transmission in the 250-330nm range, and close to full transmission in the 400-500nm range. In the 350-370nm range, the transmission is approximately 0.5. This results in a broadband exposure light consisting of the i-line (365nm), the h-line (405nm), and the g-line (435nm) from the Hg spectrum. Dependent on the spectral sensitivity of the resist, the optimal dose may be decreased compared to i-line exposure on the KS-Aligner.
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| *[[Specific Process Knowledge/Lithography/UVExposure_Dose|Information on UV exposure dose]]
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| === Equipment performance and process related parameters ===
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| {| border="2" cellspacing="0" cellpadding="2"
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| !style="background:silver; color:black;" align="center" width="60"|Purpose
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| |style="background:LightGrey; color:black"|
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| Alignment and UV exposure, potentially DUV exposure
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| |-
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| !style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
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| |style="background:LightGrey; color:black"|Exposure mode
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| vacuum contact, hard contact, soft contact, proximity, flood exposure
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| |-
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| | style="background:LightGrey; color:black"|Exposure light/filters
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| *broadband (i-, g-, h-line)
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| *SU8 filter (½i-, g-, h-line)
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| *365 nm (i-line)
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| |-
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| |style="background:LightGrey; color:black"|Minimum structure size
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| down to 1.25µm
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| |-
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| |style="background:LightGrey; color:black"|Mask size
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| *5x5 inch
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| *7x7 inch
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| |-
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| |style="background:LightGrey; color:black"|Alignment modes
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| *Top side (TSA)
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| *Backside (BSA)
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| |-
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| !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
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| |style="background:LightGrey; color:black"|Substrate size
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| * 50 mm wafers
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| * 100 mm wafers
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| * 150 mm wafers
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| |-
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| | style="background:LightGrey; color:black"|Allowed materials
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| All substrates except III-V, copper, and steel
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| All films except type IV
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| |-
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| |style="background:LightGrey; color:black"|Batch
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| 1
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| |-
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| |}
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