Specific Process Knowledge/Thermal Process: Difference between revisions
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== Choose a process type == | == Choose a process type == | ||
*[[Oxidation]] - ''grow an oxide'' | *[[/Oxidation|Oxidation]] - ''grow an oxide'' | ||
*[[Annealing]] | *[[/Annealing|Annealing]] | ||
*[[Dope with Boron]] | *[[/Dope with Boron|Dope with Boron]] | ||
*[[Dope with Phosphorus]] | *[[/Dope with Phosphorus|Dope with Phosphorus]] | ||
== Choose an equipment to use == | == Choose an equipment to use == | ||
*[[A1 Furnace Boron drive-in]] - ''For oxidation of new wafers and for drive in of Boron pre-dep'' | *[[/A1 Furnace Boron drive-in|A1 Furnace Boron drive-in]] - ''For oxidation of new wafers and for drive in of Boron pre-dep'' | ||
*[[A2 Furnace Boron pre-dep]] - ''Dope with Boron: For predeposition of Boron on wafers'' | *[[/A2 Furnace Boron pre-dep|A2 Furnace Boron pre-dep]] - ''Dope with Boron: For predeposition of Boron on wafers'' | ||
*[[A3 Furnace Phosphorus drive-in]] - ''For oxidation of new wafers and for drive in of Phosphorus pre-dep'' | *[[/A3 Furnace Phosphorus drive-in|A3 Furnace Phosphorus drive-in]] - ''For oxidation of new wafers and for drive in of Phosphorus pre-dep'' | ||
*[[A4 Furnace Phosphorus pre-dep]] - ''Dope with Phosphorus: For predeposition of Phosphorus on wafers'' | *[[/A4 Furnace Phosphorus pre-dep|A4 Furnace Phosphorus pre-dep]] - ''Dope with Phosphorus: For predeposition of Phosphorus on wafers'' | ||
*[[C1 Furnace Gate Oxide]] - ''For growing of Gate Oxide on new wafers'' | *[[/C1 Furnace Gate Oxide|C1 Furnace Gate Oxide]] - ''For growing of Gate Oxide on new wafers'' | ||
*[[C2 Furnace Anneal Oxide]] - ''For oxidation and annealing'' | *[[/C2 Furnace Anneal Oxide|C2 Furnace Anneal Oxide]] - ''For oxidation and annealing'' | ||
*[[C3 Furnace Anneal Bond]] - ''For annealing of bonded wafers and?? '' | *[[/C3 Furnace Anneal Bond|C3 Furnace Anneal Bond]] - ''For annealing of bonded wafers and?? '' | ||
*[[C4 Furnace Aluminium Anneal]] - ''For oxidation and annealing of wafers containing Aluminium'' | *[[/C4 Furnace Aluminium Anneal|C4 Furnace Aluminium Anneal]] - ''For oxidation and annealing of wafers containing Aluminium'' | ||
*[[Furnace Noble]] - ''For non-clean annealing'' | *[[/Furnace Noble|Furnace Noble]] - ''For non-clean annealing'' | ||
*[[Furnace Dry oxide]] - ''For oxidation of 2" wafers'' | *[[/Furnace Dry oxide|Furnace Dry oxide]] - ''For oxidation of 2" wafers'' | ||
*[[Furnace APOX]] - ''Furnace for growing very thick oxide'' | *[[/Furnace APOX|Furnace APOX]] - ''Furnace for growing very thick oxide'' | ||
*[[Jipelec RTP]] - ''For Rapid Thermal Anneal of III-V materials and Silicon based material'' | *[[/Jipelec RTP|Jipelec RTP]] - ''For Rapid Thermal Anneal of III-V materials and Silicon based material'' | ||
Revision as of 07:37, 18 October 2007
Choose a process type
- Oxidation - grow an oxide
- Annealing
- Dope with Boron
- Dope with Phosphorus
Choose an equipment to use
- A1 Furnace Boron drive-in - For oxidation of new wafers and for drive in of Boron pre-dep
- A2 Furnace Boron pre-dep - Dope with Boron: For predeposition of Boron on wafers
- A3 Furnace Phosphorus drive-in - For oxidation of new wafers and for drive in of Phosphorus pre-dep
- A4 Furnace Phosphorus pre-dep - Dope with Phosphorus: For predeposition of Phosphorus on wafers
- C1 Furnace Gate Oxide - For growing of Gate Oxide on new wafers
- C2 Furnace Anneal Oxide - For oxidation and annealing
- C3 Furnace Anneal Bond - For annealing of bonded wafers and??
- C4 Furnace Aluminium Anneal - For oxidation and annealing of wafers containing Aluminium
- Furnace Noble - For non-clean annealing
- Furnace Dry oxide - For oxidation of 2" wafers
- Furnace APOX - Furnace for growing very thick oxide
- Jipelec RTP - For Rapid Thermal Anneal of III-V materials and Silicon based material