Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions

Revision as of 12:09, 26 June 2018 view source Jmli (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 4,569 edits →Results: Etched depths in trenches of different widths ← Older edit		Revision as of 12:10, 26 June 2018 view source Jmli (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 4,569 edits →Results: Optical images Newer edit →
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	If a larger area is to be etched, the cooling must be made more efficient, either by lowering the platen temperature or with increasing the pressure of He on the backside of the wafer. This will be investigated soon.		If a larger area is to be etched, the cooling must be made more efficient, either by lowering the platen temperature or with increasing the pressure of He on the backside of the wafer. This will be investigated soon.



	=== Results: Etched depths in trenches of different widths ===		=== Results: Etched depths in trenches of different widths ===