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Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions

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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:silver; color:black"|[[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-1| '''DRIE-Pegasus 1''']]
|style="background:silver; color:black"|[[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-1| '''DRIE-Pegasus 1''']]
|style="background:silver; color:black"|[[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2| '''DRIE-Pegasus 2''']]
|style="background:silver; color:black"|[[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3| '''DRIE-Pegasus 3''']]
|style="background:silver; color:black"|[[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4| '''DRIE-Pegasus 4''']]
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!style="background:silver; color:black;" align="center" valign="center" width="80" rowspan="2"|Purpose  
!style="background:silver; color:black;" align="center" valign="center" width="80" rowspan="2"|Purpose  
|style="background:Whitesmoke; color:black"| Primary
|style="background:Whitesmoke; color:black"| Primary
|style="background:WhiteSmoke; color:black"|  
|style="background:WhiteSmoke; color:black"|  
* Dry etching of silicon
* Dry etching of 4" silicon  
* Dry etching of barc
* Dry etching of barc
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* Research tool
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* Dry etching of 6" silicon
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* Dry etching of 6" dielectrics
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|style="background:LightGrey; color:black"|Alternative
|style="background:LightGrey; color:black"|Alternative
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
* Black silicon
* Black silicon
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* Backup dry etching of 6" silicon
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* ?
|style="background:LightGrey; color:black"|
* ?
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
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* Standard processes A and B up to 15 µm/min depending on etch load and feature size
* Standard processes A and B up to 15 µm/min depending on etch load and feature size
* Other processes: Any number from 200 nm/min to 10 µm/min
* Other processes: Any number from 200 nm/min to 10 µm/min
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* ?
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* ?
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* ?
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|style="background:LightGrey; color:black"|Uniformity
|style="background:LightGrey; color:black"|Uniformity