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Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,579 edits
Line 58: Line 58:
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4| DRIE-Pegasus 4]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4| DRIE-Pegasus 4]]
|- valign="top"
|- valign="top"
! style="background:silver; color:black" width="120" |Purpose
! style="background:Whitesmoke; color:black" width="120" |Purpose
! style="background:WhiteSmoke; color:black" | Primary uses
! style="background:WhiteSmoke; color:black" | 1
| style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed.
| style="background:WhiteSmoke; color:black"| 2
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides
| style="background:WhiteSmoke; color:black"| 3
| style="background:WhiteSmoke; color:black"| Silicon etching
| style="background:WhiteSmoke; color:black"| 4


|- valign="top"
|- valign="top"
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