Specific Process Knowledge/Characterization/Probe station: Difference between revisions
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==Probe station== | ==Probe station== | ||
[[Image:probe2.jpg|thumb|300x300px|Probe station. Positioned in serviceroom CX1]] | [[Image:probe2.jpg|thumb|300x300px|Probe station. Positioned in serviceroom CX1]] | ||
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The purpose is to measure the thickness of wafers, depths of larger grooves or height of larger mesas. | The purpose is to measure the thickness of wafers, depths of larger grooves or height of larger mesas. | ||
Revision as of 12:04, 21 September 2017
Probe station
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The purpose is to measure the thickness of wafers, depths of larger grooves or height of larger mesas.
During a KOH etch it can be helpful to ensure no over-etching by making a thickness measurement during the etching.
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Purpose |
Thickness measurer |
|
|---|---|---|
|
Performance |
Thickness resolution |
|
|
Substrates |
Batch size |
|
| Substrate materials allowed |
|
The Probe station is a - EPS150Triax - Cascade for I/V measurement, ohmic measurements etc, it has 4 individually adjustable probes, but can be fitted with more. It has several source meters, multi meters and a computer attached.
It can be used from pieces up to 6" wafers
The user manual, technical information and contact information can be found in LabManager: