Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions
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The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD2). Both 100 mm and 150 mm wafers can be processed in the furnace. | The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD2). Both 100 mm and 150 mm wafers can be processed in the furnace. | ||
The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature. | |||
The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to do RCA cleaned before they enter the furnace. The only exceptions are the brand new wafers, the wafers from A-stack furnaces, the wafers from PECVD4 and the LPCVD furnaces. Please check the cross contamination information in LabManager before you use the furnace | The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. Most of wafers have to do RCA cleaned before they enter the furnace. The only exceptions are the brand new wafers, the wafers from A-stack furnaces, the wafers from PECVD4 and the LPCVD furnaces. Please check the cross contamination information in LabManager before you use the furnace | ||