Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions
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The Gate Oxide furnace (A2) is a Tempress horizontal furnace for growing gate oxide and for oxidation of other very clean silicon wafers. | The Gate Oxide furnace (A2) is a Tempress horizontal furnace for growing gate oxide and for oxidation of other very clean silicon wafers. | ||
The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature. | |||
This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace. | This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace. | ||
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'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=81 Gate Oxide furnace (A2)]''' | '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=81 Gate Oxide furnace (A2)]''' | ||
==Process knowledge== | ==Process knowledge== | ||