Specific Process Knowledge/Etch/Wet Aluminium Etch: Difference between revisions
| Line 29: | Line 29: | ||
|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! Aluminium Etch | ! Aluminium Etch | ||
! | ! Etch with PES 77-19-4 | ||
|- | |- | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Location | |||
|'Aluminium Etch' bath in Wet Bench 05 | |||
|Beaker in Fumehood 01 or 02 | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Link to KBA | !Link to KBA | ||
| | | | ||
| Line 47: | Line 54: | ||
|- | |- | ||
|-style="background: | |-style="background:LightGrey; color:black" | ||
!Chemical solution | !Chemical solution | ||
|H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | |H<sub>2</sub>O:H<sub>3</sub>PO<sub>4</sub> 1:2 | ||
| Line 58: | Line 65: | ||
|- | |- | ||
|-style="background: | |-style="background:WhiteSmoke; color:black" | ||
!Process temperature! | !Process temperature! | ||
|50 <sup>o</sup>C | |50 <sup>o</sup>C | ||
| Line 64: | Line 71: | ||
|- | |- | ||
|-style="background: | |-style="background:LightGrey; color:black" | ||
!Possible masking materials! | !Possible masking materials! | ||
|Photoresist (1.5 µm AZ5214E) | |Photoresist (1.5 µm AZ5214E) | ||
| Line 70: | Line 77: | ||
|- | |- | ||
|-style="background: | |-style="background:WhiteSmoke; color:black" | ||
!Etch rate | !Etch rate | ||
|~100 nm/min (Pure Al) | |~100 nm/min (Pure Al) | ||
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|- | |- | ||
|-style="background: | |-style="background:LightGrey; color:black" | ||
!Batch size! | !Batch size! | ||
|1-25 wafers at a time | |1-25 wafers at a time | ||
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|- | |- | ||
|-style="background: | |-style="background:WhiteSmoke; color:black" | ||
!Size of substrate | !Size of substrate | ||
|4" wafers | |4" wafers | ||
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|- | |- | ||
|-style="background: | |-style="background:LightGrey; color:black" | ||
!Allowed materials | !Allowed materials | ||
| | | | ||