Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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!style="background:silver; color:black;" align="left"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"|Deposition of TEOS silicon oxide | |style="background:LightGrey; color:black"|Deposition of TEOS silicon oxide | ||
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*Deposition of silicon oxide on silicon nitride | *Deposition of silicon oxide on silicon nitride | ||
*Deposition of silicon oxide on structured surfaces, eg. to cover holes or sealing small cavities. | *Deposition of silicon oxide on structured surfaces, eg. to cover holes or sealing small cavities. | ||
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!style="background:silver; color:black" align="left"|Performance | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Film thickness| | ||
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*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | *Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | ||
*SRN: ~50Å - ~10000Å | *SRN: ~50Å - ~10000Å | ||
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|style="background:LightGrey; color:black"|Step coverage | |||
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*Good | *Good | ||
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|style="background:LightGrey; color:black"|Film quality | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dense film | *Dense film | ||
*Few defects | *Few defects | ||
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!style="background:silver; color:black" align="left"|Process parameter range | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*800-835 <sup>o</sup>C | *800-835 <sup>o</sup>C | ||
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|style="background:LightGrey; color:black"|Process pressure | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*80-230 mTorr | *80-230 mTorr | ||
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|style="background:LightGrey; color:black"|Gas flows | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*SiH<math>_2</math>Cl<math>_2</math>:10-100 sccm | *SiH<math>_2</math>Cl<math>_2</math>:10-100 sccm | ||
*NH<math>_3</math>:10-75 sccm | *NH<math>_3</math>:10-75 sccm | ||
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!style="background:silver; color:black" align="left"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
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*Deposition on both sides of the substrate | *Deposition on both sides of the substrate | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers (new from the box or RCA cleaned) | *Silicon wafers (new from the box or RCA cleaned) | ||