Specific Process Knowledge/Thermal Process/Resist Pyrolysis Furnace: Difference between revisions

@@ Line 38: / Line 38: @@
 |style="background:LightGrey; color:black"|Temperature
 |style="background:WhiteSmoke; color:black"|
-*0-1100 <sup>o</sup>C
+*0-1000 <sup>o</sup>C
 *Temperature ramp-up rate: Max 10 <sup>o</sup>C/min
 *Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
@@ Line 60: / Line 60: @@
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-25 50 mm wafers (placed on a Si support wafers)
+*1-4 50 mm wafers (placed on Si carrier wafers)
-*1-25 100 mm wafers
+*1-5 100 mm wafers (place on Si carrier wafers or in a horizontal wafer boat)
-*1-25 150 mm  wafers
 *Several smaller samples if these are placed on a support wafer
 |-
@@ Line 74: / Line 73: @@
 *AZ resist (prebaked)
 *SU-8 (prebaked)
+*Other resist - Permission required
 |-
 |}