Specific Process Knowledge/Thermal Process/Resist Pyrolysis Furnace: Difference between revisions

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|style="background:LightGrey; color:black"|Temperature
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*0-1100 <sup>o</sup>C
*0-1000 <sup>o</sup>C
*Temperature ramp-up rate: Max 10 <sup>o</sup>C/min
*Temperature ramp-up rate: Max 10 <sup>o</sup>C/min
*Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
*Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
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|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
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|style="background:WhiteSmoke; color:black"|
*1-25 50 mm wafers (placed on a Si support wafers)
*1-4 50 mm wafers (placed on Si carrier wafers)
*1-25 100 mm wafers
*1-5 100 mm wafers (place on Si carrier wafers or in a horizontal wafer boat)
*1-25 150 mm  wafers
*Several smaller samples if these are placed on a support wafer
*Several smaller samples if these are placed on a support wafer
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|-
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*AZ resist (prebaked)
*AZ resist (prebaked)
*SU-8 (prebaked)
*SU-8 (prebaked)
*Other resist - Permission required
|-  
|-  
|}
|}

Revision as of 11:08, 26 June 2017

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Resist Pyrolysis Furnace

The Resist Pyrolysis furnace located in cleanroom area A-5

The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are heated up to maximum 1000 oC in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample.

If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed. Thus, for each process it is important to include a step with a high nitrogen flow at a lower temperature, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.

During processing the furnace is rapidly heated by use of six long heating lamps situated around the furnace tube, and cooling is done (rather slowly) by use of cooling fans. The furnace is purged with a controlable nitrogen flow. There is no vacuum on the furnace.

The user manual, user APV and contact information can be found in LabManager:

Resist Pyrolysis Furnace

Process information

There are no standard processes on the furnace.

Equipment performance and process related parameters

Equipment Reist Pyrolysis Furnace
Purpose
  • Pyrolysis of different resist layers to form conductive structures
Process parameter range Temperature
  • 0-1000 oC
  • Temperature ramp-up rate: Max 10 oC/min
  • Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
Process gasses
  • N2
  • H2
  • O2
Vacuum
  • Yes, but using N2 and O2 process gasses
Nitrogen flows
  • Flow 1: Max 660 liter/hour
  • Flow 2: Max 3500 liter/hour
Substrates Batch size
  • 1-4 50 mm wafers (placed on Si carrier wafers)
  • 1-5 100 mm wafers (place on Si carrier wafers or in a horizontal wafer boat)
  • Several smaller samples if these are placed on a support wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Polysilicon
  • Quartz
  • AZ resist (prebaked)
  • SU-8 (prebaked)
  • Other resist - Permission required
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