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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 110: Line 110:
|&plusmn; 1.7%<!-- Unif. [%] -->
|&plusmn; 1.7%<!-- Unif. [%] -->
|Compressive: 1.4 MPa<!-- Stress [MPa] -->
|Compressive: 1.4 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|Measured after anneal in Clad1000 <!-- Comments -->
|17<!-- SiH4 [sccm] -->
|17<!-- SiH4 [sccm] -->
|<!-- NH3 [sccm] -->
|<!-- NH3 [sccm] -->
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