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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 18: Line 18:
!|N2O [sccm]
!|N2O [sccm]
!|N2 [sccm]
!|N2 [sccm]
!|B2H6
!|PH3
!|Pressure [mTorr]
!|Pressure [mTorr]
!|Power [W]
!|Power [W]
Line 79: Line 81:
|-
|-
|BPSG<!-- Recipe -->
|BPSG<!-- Recipe -->
|12.2-12.4 nm/min<!-- Dep. rate [nm/min] -->
|259 nm/min<!-- Dep. rate [nm/min] -->
|2.017-2.021<!-- RI -->
|1.4593<!-- RI -->
|&plusmn; 1.2-1.6%<!-- Unif. [%] -->
|&plusmn; 1.7%<!-- Unif. [%] -->
|Tensile: 431.6 MPa<!-- Stress [MPa] -->
|Compressive: 36.7 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|Measured after anneal in Clad1000<!-- Comments -->
|40<!-- SiH4 [sccm] -->
|17<!-- SiH4 [sccm] -->
|55<!-- NH3 [sccm] -->
|<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|1600<!-- N2O [sccm] -->
|1960<!-- N2 [sccm] -->
|<!-- N2 [sccm] -->
|135<!-- B2H6 -->
|40<!-- PH3 -->
|900 mTorr<!-- Pressure [mTorr] -->
|900 mTorr<!-- Pressure [mTorr] -->
|20 W<!-- Power [W] -->
|20 W<!-- Power [W] -->
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