Specific Process Knowledge/Thin film deposition: Difference between revisions

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[[/Deposition of Silicon|Silicon]] <br/>
[[/Deposition of Silicon|Silicon]] <br/>
[[/Deposition of Germanium|Germanium]] <br/>
[[/Deposition of Germanium|Germanium]] <br/>
[[/Lesker|Zinc Oxide (ZnO)]]<br/>
[[/Deposition of ZnO|Zinc Oxide (ZnO)]]<br/>
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[[/Deposition of Aluminium|Aluminium]] <br/>
[[/Deposition of Aluminium|Aluminium]] <br/>

Revision as of 12:20, 20 March 2017

3rd Level - Material/Method

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Choose material to deposit

Dielectrica Semicondutors Metals Alloys Transparent conductive oxides Polymers

Silicon Nitride - and oxynitride
Silicon Oxide
Titania (TiO2, Titanium Oxide)
Alumina (Al2O3, Aluminium Oxide)
Aluminum Nitride (AlxNy)
Tantalum (Ta2O5, Tantalum pentoxide)
Cromia (Cr2O3, Chromium Oxide)

Silicon
Germanium
Zinc Oxide (ZnO)

Aluminium
Titanium
Chromium
Cobalt
Nickel
Copper
Molybdenum
Palladium
Silver
Tin
Tantalum
Tungsten
Platinum
Gold
Iron
Magnesium
Niobium
Ruthenium

TiW alloy (10%/90% by weight)
NiV alloy
AlCu
CoFe
CuTi
FeMn
MnIr
NiCo
NiFe
YSZ (Yttrium stabilized Zirconium)

ITO (Tin doped Indium Oxide)
AZO (Aluminum doped Zinc Oxide)

SU-8
Antistiction coating
Topas
PMMA

Choose deposition equipment

PVD LPCVD PECVD ALD Coaters Others


See the Lithography/Coaters page for coating polymers