Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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Aluminium Anneal furnace (C4)

The Aluminium Anneal furnace (C4) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers with aluminium or ALD oxides such as Al2O3 and TiO2.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom B-1. In this furnace allowed to process wafers that contain aluminium. Please check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge

Annealing: look at the Annealing page

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose		Annealing of wafers with aluminium Oxidation of wafers with aluminium
Process parameter range	Process Temperature	400-500 ^oC
	Process pressure	1 atm
	Gas flows	N₂: 0-10 slm O₂: 0-10 slm
Substrates	Batch size	1-30 100 mm wafers (or 50 mm wafers)
Substrates	Substrate materials allowed	Silicon wafers with aluminium. Silicon wafers with ALD oxides Al2O3 and TiO2 Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone

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 *Silicon wafers with aluminium.
+Silicon wafers with ALD oxides Al2O3 and TiO2
 *Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
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