Specific Process Knowledge/Thin film deposition/ALD2 (PEALD): Difference between revisions

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 [[image:ALD2.jpg|300x300px|right|thumb|Picosun R200 PEALD, positioned in cleanroom F-2.]]
-The ALD2 is used to deposit very thin and uniform layers of different materials, by use of thermal ALD or PEALD (Plasma Enhanced Atomic Layer Deposition).
+The ALD 2 (PEALD) is used to deposit very thin and uniform layers of different materials, by use of thermal ALD or PEALD (Plasma Enhanced Atomic Layer Deposition).
-The ALD deposition takes place in a ALD reactor chamber. In order to ensure that the temperature inside this reactor is the same everywhere, it has a dual chamber structure. The inner chamber is the reactor chamber, and the outer chamber is isolating the reactor chamber from room air. Both the inner and the outer chamber are under vacuum. The space between the two chambers is called an intermediate space (IMS), and the IMS is constantly purged with nitrogen.
+The ALD deposition takes place in an ALD reactor chamber. In order to ensure that the temperature inside this reactor is the same everywhere, it has a dual chamber structure. The inner chamber is the reactor chamber, and the outer chamber is isolating the reactor chamber from room air. Both the inner and the outer chamber are under vacuum. The space between the two chambers is called an intermediate space (IMS), and the IMS is constantly purged with nitrogen.
 When a sample is loaded into the reactor chamber, it will take some time before it reaches the desired temperature. Thus, it is important to include a temperature stabilization time in the deposition recipes.