Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly2: Difference between revisions

Revision as of 13:30, 17 January 2017

**Process runs**
Date	Substrate Information				Process Information				SEM Images
Date	Wafer info	Mask	Material/ Exposed area	Tool / Operator	Conditioning	Recipe	Wafer ID	Comments	SEM Images
3/12-2014	1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier	standard stepper mask (50 nm barc + 320 nm krf)	Si / 50+ %	Pegasus/jmli	10 minute TDESC clean + 45 sec barc etch	danchip/jml/showerhead/Cpoly2, 20 cycles or 2:08 minutes	S004729	New showerhead	File:S004729-01.jpg File:S004729-02.jpg File:S004729-03.jpg

Revision as of 13:54, 11 December 2014 view source Jmli (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 4,416 edits No edit summary ← Older edit		Revision as of 13:30, 17 January 2017 view source Jmli (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 4,416 edits No edit summary Newer edit →
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